Dr. Yoshio Nishi
Dr. Nishi is a Professor of Electrical Engineering and Director of Nanofabrication Facility at Stanford University since May 2002. He also serves as the Chief Scientist for Texas Instruments on a part-time basis. Dr. Nishi was the first to be appointed as Chief Scientist at TI.
Previous to Stanford, Dr. Nishi was at TI, where he started as Vice President and Director of Research and Development for the Semiconductor Group in 1995, and was elected Senior Vice President in the following year. At TI, he directed research work for the Digital Signal Processing Solutions R&D Center, the Silicon Technology Development at Kilby Center, the Tsukuba R&D Center in Japan, and the Converter Product Development Center in New Jersey and Dallas. Dr. Nishi was also at Hewlett-Packard where he established and became director of the ULSI Research Laboratory, a new advanced research laboratory at HP. At HP, Dr. Nishi also served as Director of the Silicon Process Laboratory and Director of the R&D Center for Integrated Circuits Business Division.
Dr. Nishi started his professional career at Toshiba Corporation where he spent more than 20 years pioneering various semiconductor related researches. His leadership roles include the world's first CMOS 1Mb dynamic, 256Kb CMOS static and 1Mb CMOS programmable memories. With those achievements, he has been credited as a technology leader who brought Toshiba to the world as a leading memory manufacturer.
Dr. Nishi's current involvement in other activities includes:
- Board of Directors, Japan-America Society of Dallas/Fort Worth, 1999-present
- Advisory Committee, IS&T, Lawrence Livermore National Labs, 1998-present
- Governing Council, SIA Focus Center Research Programs, 1998-present
- Executive Advisory Board, MARCO/DARPA Gigascale Silicon Research Center, 1998-present
- Executive Advisory Board, MARCO Interconnect Research Center, 1998-present
- Corporate member, Dallas Japanese Association, 1998-present
- Technology Strategy Committee, SIA, 1997-present
- Board of Directors, SEMATECH and International SEMATECH, 1996-present
- Board of Directors, Semiconductor Research Corporation, 1996-present
- Policy Board, NSF/SRC ERC for Environmentally Benign Semiconductor Manufacturing, 1996-present
Dr. Nishi holds a B.S. in metallurgy from Waseda University and Ph.D. in electronics engineering from the University of Tokyo. Dr. Nishi has published approximately 75 papers in international technical journals and conferences and has co-authored nine books. He has been awarded more than 50 patents in the U.S. and Japan. He received IEEE Fellow Award (1987), 1995 IEEE Jack A. Morton Award for "Contributions to the basic understanding and innovative development of MOS device technology" and became 2002 IEEE Robert Noyce Medal winner for "Strategic leadership in global semiconductor research and development".